After sputtering with N-Cr, a microstructure of temperature-sensitive sensor was formed, and its character of R-T and thermal response time constant were measured. 然后在微桥上溅射镍&铬电阻薄膜,形成温敏传感器微结构,并对其温度电阻特性,热响应时间进行了测量。
Experimental results included the real thermal responses of several tissues under single ruby laser pulse and CW CO-2 laser. The thermal response difference was also discussed with variable duration time, temperature rise peak and rise time. 实验记录了单个红宝石激光脉冲、连续CO2激光作用下多种组织的热响应过程,从辐照时间、温升峰值、上升时间等角度讨论了不同组织、不同条件下组织热响应的差异。
It is concluded that the temperature sensor has good linearity and thermal stability within the temperature range and can response very fast. Its response time is only 0.8 ms. 对研制的薄膜热电偶温度传感器进行了静态和动态标定,结果表明传感器在0-600℃测温范围内具有很好的线性和热稳定性,而且响应快,时间常数小于0.8ms。
Experiments show that the thermal response stage takes a long time when to simulate more than a dozen cores of microprocessor. 实验表明,当ATMI模拟器在模拟十几个核的处理器温度的时候,热响应阶段的计算需要一个周的时间。
The statistical analysis of thermal response shows that the response temperature is significantly dependent on time and location. Large variations in the statistics parameters are observed at the location where temperature slip occurs for the first one minute of entry. 温度响应的统计特征分析表明材料的响应温度随时间和位置的变化而不断变化;再入的开始1分钟内在发生温度滑移的位置热响应的变异系数、斜度和峰度会发生突变。
At the same time, over more temperature and thermal response time would be also varied from the different testing point location. 同时过余温度和热响应时间也将会因为各测点位置的不同而相应产生不同的变化。